GeSn 320 × 256 Focal Plane Array for Silicon-Based Short-wave Infrared Imaging
In this work, a high-performance 320×256 focal plane array based on group-IV semiconductors has been manufactured on a Si substrate using Ge0.9Sn0.1 film as absorption material. With the help of the read-out circuits, SWIR images have been successfully captured for the first time.
Authors
- Chi Xu (ORCID: https://orcid.org/0000-0002-3374-1580)
- Fenghe Fu
- Yue Li (ORCID: https://orcid.org/0000-0002-1202-4224)
- Xue Chun-Lai
- Guoyin Xu (ORCID: https://orcid.org/0000-0003-0454-3320)
- Hui Cong
- Zhengjie Wu
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10984513
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Youth Innovation Promotion Association