300mm IIIV on SOI laser integration process, fabrication and prototyping
The fabrication of SOI integrated IIIV lasers using a full 300mm CMOS foundry flow is reported. After SOI fabrication, IIIV Wafers are bonded then processed with CMOS compatible planar BEOL. The lasers are tested, exhibiting around 70mA threshold, 30dB SMSR with mW range output power.
Authors
- Karen Ribaud
- V. Mathieu (ORCID: https://orcid.org/0000-0003-4955-3311)
- Bertrand Szelag (ORCID: https://orcid.org/0000-0003-0989-8630)
- C. Castan
- Benoı̂t Charbonnier (ORCID: https://orcid.org/0000-0002-1421-9105)
- A. Bellemin-Comte
- Karim Hassan (ORCID: https://orcid.org/0000-0002-5518-8229)
- Pierre-Emile Philip
- Damien Hebras
- Laetitia Adelmini
- Jean-Michel Hartmann
- Mathieu Stigliani
Institutions
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/siphotonics64386.2025.10985732
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73