Bounded Flux-Based Modelling of the Memristor and Implementation of Hybrid CMOS-Memristor Read-Write Circuit

This manuscript presents the development, verification, and practical application of an oxide-based memristor behavioural model in Verilog-A, incorporating the resistive switching and bounded flux properties of memristors. Parameters like the mobility of oxygen vacancies <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{\varphi})$</tex>, length of the device (D), and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{R}_{\mathbf{off}}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{R}_{\text{on}}$</tex> parameters indeed depend on the nature of the material. Depending on these parameters, the device can respond to high-frequency and low-frequency input pulses. The developed memristor behavioural model captures the dynamic behaviour of memristive devices by combining the essential features of resistive switching and bounded flux. Through extensive simulations and in-depth discussions, the accuracy of the model is verified, and various read-and-write methodologies are explored and analysed. To showcase the practical application of the model, a read-and-write circuit is designed using pass transistors (CMOS) and memristors. Leveraging the resistive switching and bounded flux properties, the circuit is optimised to achieve efficient read and write operations. The functionality and performance of the circuit are verified using the Cadence Virtuoso simulator, ensuring its adherence to the expected behaviour based on the memristor behavioural model.