Comparison of Electrical Properties of Different Ferroelectric Structures for Non -Volatile Memory Applications

This article represents different ferroelectric structures which are metal ferroelectric insulator silicon, metal ferroelectric silicon and metal insulator silicon. There is a comparison of leakage current of different structures. Metal ferroelectric insulator silicon structure shows better leakage current and memory window as compared to other structures. Leakage current is calculated by current-voltage characteristics and memory window size from capacitance-voltage characteristics.