A Simulation Study of InP/Si Heterostructure for Sensing in the NIR Spectrum

This paper presents a highly sensitive and selective InP/Si photodetector tailored for detecting 830 nm wavelength light. A comprehensive simulation analysis of the InP/Si heterostructure has been conducted to assess its optical performance across a wide spectrum of light. The optical characteristics of the resulting device are being evaluated by using a broad light source with an optical power of ~1 mW. The device's optical performance has been quantified in terms of responsivity and sensitivity. The responsivity of the proposed device has been measured under 830 nm illumination and bias voltages of -3 V, -2 V, and -1 V, yielding values of 2.4 mA/W, 1.9 mA/W, and 1.4 mA/W, respectively. These impressive performance metrics, coupled with the compact and low design complexity of the device, position it as a promising candidate for applications in the optoelectronics industry.