Design Innovations in TFETS: Enhancing Performance and Sensitivity Through Charged Plasma, Dual-Gate, and Work Function Techniques

In recent years, Tunnel Field-Effect Transistors (TFETs) have garnered considerable attention as promising candidates to achieve the new generation of electronics that require high performance, low power, and scalability as they can provide increased energy efficiency due to the band-to-band tunneling (BTBT) mechanism and have a steep subthreshold slope. Nonetheless, the standard TFETs suffer from low on-state current along with short-channel effects and processing difficulties. However, to exploit these emerging potentials and improve TFET performance and capabilities junction less TFET, dual material gate, heterojunction architectures and driven work-function engineering innovations have arisen creating room for the use of TFETs in biosensing applications as well as high-frequency circuit designs. This review highlights four of the most significant advancements that comprise: Junction less and Core-Shell Nanotube TFETs for high-sensitivity detection of label-free biomolecules, Dual- Material Gate Heterojunction TFETs for enhanced on current and switching speeds, Symmetric Double-Gate Charge Plasma TFETs for simplified doping-less fabrication, and Drain Work Function Engineered TFETs to enable ambipolar suppression and improve RF performance. We then analyze the structure, functions, and applications as well the tradeoffs in terms of scalability, stability and reliability for each design.