Novel Quaternary Circuits based on Hybrid GNRFET-RRAM Technology

This paper investigates the design and performance of novel quaternary logic gates implemented using a hybrid graphene nanoribbon field-effect transistor (GNRFET) and resistive random-access memory (RRAM) technologies. A comparative analysis is conducted against equivalent circuits utilizing carbon nanotube field-effect transistors (CNTFETs) and RRAMs. The proposed GNRFET-RRAM architecture demonstrates significant performance advantages, exhibiting improvements of up to 55.64%, 71.61%, and 87.43% in propagation delay, power consumption, and power-delay product (PDP), respectively, compared to the CNTFET-RRAM gates. These findings highlight the potential of the hybrid GNRFET-RRAM approach for realizing energy-efficient and high-speed quaternary logic circuits and thereby contributing to the advancement of next-generation computing paradigms.