Spacer Optimization using a Neuro-Pso Approach for Improving FinFET Repeater Performance in On-Chip Global MLGNR Interconnects

Spacers are often used in fin-shaped field effect transistors (FinFETs) to increase the ON current at the cost of higher parasitic capacitances. In this paper, a neural network assisted particle swarm optimization technique called neuro-PSO is developed to optimize the geometrical and material parameters of spacers in order to enhance the performance of FinFET based repeaters in on-chip global MLGNR interconnects. The proposed neuro-PSO approach is able to achieve a much smaller power delay product of MLGNR interconnects while requiring a smaller repeater area than what is possible when no spacers are used.

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Published
2024-12-17
DOI
https://doi.org/10.1109/edaps64431.2024.10988477
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.21
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article

Spacer Optimization using a Neuro-Pso Approach for Improving FinFET Repeater Performance in On-Chip Global MLGNR Interconnects

Rohit Sharma, Avirup Dasgupta, Asha Kumari Jakhar, Sourajeet Roy
1 citations
Advancements in Semiconductor Devices and Circuit Design
0.21
article

Spacer Optimization using a Neuro-Pso Approach for Improving FinFET Repeater Performance in On-Chip Global MLGNR Interconnects

Rohit Sharma, Avirup Dasgupta, Asha Kumari Jakhar, Sourajeet Roy
article en
1 citations

Abstract

Spacers are often used in fin-shaped field effect transistors (FinFETs) to increase the ON current at the cost of higher parasitic capacitances. In this paper, a neural network assisted particle swarm optimization technique called neuro-PSO is developed to optimize the geometrical and material parameters of spacers in order to enhance the performance of FinFET based repeaters in on-chip global MLGNR interconnects. The proposed neuro-PSO approach is able to achieve a much smaller power delay product of MLGNR interconnects while requiring a smaller repeater area than what is possible when no spacers are used.

Indian Institute of Technology Ropar (IN), Indian Institute of Technology Roorkee (IN)
Affordable and clean energy
Openalex Percentile: Top 43%
Advancements in Semiconductor Devices and Circuit Design
0.21
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