Numerical Simulation of CMOS Inverter using Gallium Nitride (GaN)

This article presents a numerical simulation of CMOS inverter using Gallium Nitride (GaN) technology and utilizes Atlas TCAD for composition modeling and electrical characterization. Simulation focuses on GaN/AlGaN heterocercal, adaptation of physical properties for high electron mobility and improves switching performance. The device is designed with doping concentrations and transport models defined to achieve accurate ID VG and ID VD properties. Compared to traditional silicone-based inverters, GaN-based reformers show better effect efficiency, high degradation voltage and increased thermal stability, making them ideal for high frequency and high-power applications. The simulation results obtained validate the possibility of GAN CMOS inverter with better performance measurements. The structure confirms the expected behavior by demonstrating possible rf and power electronics. This study highlights the benefits of GAN technology in the next generation semiconductor units and promotes further progress in high executive digital and analog cycles.