Performance of Plasma Treated 2D MoS<sub>2</sub> Synaptic Memristor for Neuromorphic Computing
In this work, we investigate the performance of two-dimensional (2D) MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based memristors subjected to oxygen and argon plasma treatments for non-volatile memory and neuromorphic computing applications. Electrical transport measurements indicate that memristors treated with oxygen plasma exhibit a higher ON/OFF current ratio, lower SET/RESET voltages, enhanced multilevel state capabilities, and more linear and symmetric conductance changes compared to those treated with argon plasma. Furthermore, oxygen plasma-treated memristors demonstrate superior recognition accuracy. This study provides a detailed evaluation of plasma-treated memristors and offers valuable insights for enhancing synaptic functionality in memristive systems.
Authors
- Rohit Sharma (ORCID: https://orcid.org/0000-0002-7795-7551)
- Kanupriya Varshney (ORCID: https://orcid.org/0009-0008-8020-9336)
- Devarshi Mrinal Das (ORCID: https://orcid.org/0000-0002-8092-0979)
- Brajesh Rawat (ORCID: https://orcid.org/0000-0003-0131-6122)
Institutions
- Indian Institute of Technology Ropar (IN)
Publication Details
- Published
- 2024-12-17
- DOI
- https://doi.org/10.1109/edaps64431.2024.10988471
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00