Effect of Rare-Earth Co-Doping on the Trap Level Concentrations in Silica Glasses: Experimental and Theoretical Study of the Light Emission Under X-Rays for Dosimetry Applications

In this paper, an experimental and theoretical study was undertaken to assess the impact of rare-earth co-doping of silica glasses on the light emission under X-rays. To this aim, radioluminescence (RL), phosphorescence (PP), and thermoluminescence (TL) signals of Ce<sup>3+</sup>/Gd<sup>3+</sup> co-doped silica glasses have been successively measured and combined at different dose rates and irradiation temperatures. The RL response of the weakly co-doped sample was found to be temperature-independent between 273 K and 353 K. This result suggests that, based on this RL response, it is possible to design ionizing radiation sensors independent of the irradiation temperature in the corresponding range. Moreover, a model that considers the electron-hole pair generation, the charge carrier trapping-detrapping, and the electron-hole recombination in the localized and delocalized bands has been developed to reproduce these optical signals. The theoretical model also explains the temperature independence of the RL response between 273 K and 353 K for the weakly co-doped sample and, therefore, the operating principle of an X-ray sensor independent of the irradiation temperature.

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Publication Details

Journal
Sensors
Published
2025-05-09
DOI
https://doi.org/10.3390/s25103005
Citations
1
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.52

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article

Effect of Rare-Earth Co-Doping on the Trap Level Concentrations in Silica Glasses: Experimental and Theoretical Study of the Light Emission Under X-Rays for Dosimetry Applications

Franck Mady, Bruno Capoen, Gilles Mélin, Hicham El Hamzaoui et al.
1 citations
Sensors
Luminescence Properties of Advanced Materials
0.52
article

Effect of Rare-Earth Co-Doping on the Trap Level Concentrations in Silica Glasses: Experimental and Theoretical Study of the Light Emission Under X-Rays for Dosimetry Applications

Franck Mady, Bruno Capoen, Gilles Mélin, Hicham El Hamzaoui, Y. Ouerdane, Ismail Zghari, A. Boukenter, Mourad Benabdesselam, Adriana Morana, Sylvain Girard, Mohamed Bouazaoui, Sarah Garzandat
article en
1 citations

Abstract

In this paper, an experimental and theoretical study was undertaken to assess the impact of rare-earth co-doping of silica glasses on the light emission under X-rays. To this aim, radioluminescence (RL), phosphorescence (PP), and thermoluminescence (TL) signals of Ce<sup>3+</sup>/Gd<sup>3+</sup> co-doped silica glasses have been successively measured and combined at different dose rates and irradiation temperatures. The RL response of the weakly co-doped sample was found to be temperature-independent between 273 K and 353 K. This result suggests that, based on this RL response, it is possible to design ionizing radiation sensors independent of the irradiation temperature in the corresponding range. Moreover, a model that considers the electron-hole pair generation, the charge carrier trapping-detrapping, and the electron-hole recombination in the localized and delocalized bands has been developed to reproduce these optical signals. The theoretical model also explains the temperature independence of the RL response between 273 K and 353 K for the weakly co-doped sample and, therefore, the operating principle of an X-ray sensor independent of the irradiation temperature.

SensorsVol. 25(10)
Centre National de la Recherche Scientifique (FR), Institut Universitaire de France (FR), Université Côte d'Azur (FR), Université de Lille (FR), Laboratoire Hubert Curien (FR), Ministère de l'Enseignement Supérieur, de la Recherche et de l'Espace (FR), Institut de Physique de Nice (FR), Laboratoire de Physique des Lasers, Atomes et Molécules (FR), Université Jean Monnet (FR)
Université de Lille, İslam Tarih, Sanat ve Kültür Araştırma Merkezi, Agence Nationale de la Recherche, European Regional Development Fund
Openalex Percentile: Top 39%
Luminescence Properties of Advanced Materials
0.52
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