Study of Nitrogen Percent in InSbN Bulk CrystalGrown by VDS method

Three bulk ingots of InSbN with 12mm diameter were grown using vertical directional solidification process with nitrogen composition 0.1%, 0.2% and 0.5%. The composition was studied using various methods. The EDS and secondary ion mass spectroscopy results indicated that the nitrogen was uniformly distributed throughout the crystal. The optical and electrical properties were studied. The optical and electrical properties varied with change in composition of nitrogen in Indium antimony.