High‐Entropy Modulation on Na‐O Configuration Toward Ultrastable Sodium Layered Oxide

Although O3-type layered oxides are promising candidates as cathode materials in sodium-ion batteries (SIBs), it is still plagued by poor stabilities owing to the inevitable degradation of Na-O bond and subsequent side reactions as exposed to moist atmosphere. Here, a new O3-type high-entropy layered oxide NaMn<sub>0.4</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>M<sub>0.1</sub>O<sub>2</sub> (HE-NaMFN, M = Cu/Ti/Zn/Sn/Sb) is developed by high-entropy modulation on NaMn<sub>0.5</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>O<sub>2</sub>. This process involves the implantation of five metal atoms with different d -orbital electron numbers into the layered oxide, increasing the energy gap between O 2p and metal d orbitals (Δp-d) from 0.8 to 1.0 eV, associated with the reduced hybridization between O and the metal atoms for the resultant high-entropy layered oxide. Benefited from the weakened metal-O interaction, the high-entropy layered oxide has suppressed Na-O configuration with an enhanced binding energy, showing ultrastable feature after air exposure for up to 30 days. Consequently, the resultant layered oxide discloses improved structure reversibility, achieving a reversible capacity of 156 mAh g<sup>-1</sup> with a capacity retention of 90%, good rate capability and long-term cycling stability for sodium storage.

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Publication Details

Journal
Small
Published
2025-05-08
DOI
https://doi.org/10.1002/smll.202501933
Citations
7
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
5.11

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article

High‐Entropy Modulation on Na‐O Configuration Toward Ultrastable Sodium Layered Oxide

Zhiguo Du, Shubin Yang, Yuxuan Gao, Jiaxiang Shang et al.
7 citations
Small
Semiconductor materials and devices
5.11
article

High‐Entropy Modulation on Na‐O Configuration Toward Ultrastable Sodium Layered Oxide

Zhiguo Du, Shubin Yang, Yuxuan Gao, Jiaxiang Shang, Yu Shi, Bin Li, Ziming Wang, Hao Chen, Zicheng Luo
article en
7 citations

Abstract

Although O3-type layered oxides are promising candidates as cathode materials in sodium-ion batteries (SIBs), it is still plagued by poor stabilities owing to the inevitable degradation of Na-O bond and subsequent side reactions as exposed to moist atmosphere. Here, a new O3-type high-entropy layered oxide NaMn<sub>0.4</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>M<sub>0.1</sub>O<sub>2</sub> (HE-NaMFN, M = Cu/Ti/Zn/Sn/Sb) is developed by high-entropy modulation on NaMn<sub>0.5</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>O<sub>2</sub>. This process involves the implantation of five metal atoms with different d -orbital electron numbers into the layered oxide, increasing the energy gap between O 2p and metal d orbitals (Δp-d) from 0.8 to 1.0 eV, associated with the reduced hybridization between O and the metal atoms for the resultant high-entropy layered oxide. Benefited from the weakened metal-O interaction, the high-entropy layered oxide has suppressed Na-O configuration with an enhanced binding energy, showing ultrastable feature after air exposure for up to 30 days. Consequently, the resultant layered oxide discloses improved structure reversibility, achieving a reversible capacity of 156 mAh g<sup>-1</sup> with a capacity retention of 90%, good rate capability and long-term cycling stability for sodium storage.

SmallVol. 21(26)
Beihang University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Beijing Municipality, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 5%
Semiconductor materials and devices
5.11
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