High‐Entropy Modulation on Na‐O Configuration Toward Ultrastable Sodium Layered Oxide
Although O3-type layered oxides are promising candidates as cathode materials in sodium-ion batteries (SIBs), it is still plagued by poor stabilities owing to the inevitable degradation of Na-O bond and subsequent side reactions as exposed to moist atmosphere. Here, a new O3-type high-entropy layered oxide NaMn<sub>0.4</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>M<sub>0.1</sub>O<sub>2</sub> (HE-NaMFN, M = Cu/Ti/Zn/Sn/Sb) is developed by high-entropy modulation on NaMn<sub>0.5</sub>Fe<sub>0.3</sub>Ni<sub>0.2</sub>O<sub>2</sub>. This process involves the implantation of five metal atoms with different d -orbital electron numbers into the layered oxide, increasing the energy gap between O 2p and metal d orbitals (Δp-d) from 0.8 to 1.0 eV, associated with the reduced hybridization between O and the metal atoms for the resultant high-entropy layered oxide. Benefited from the weakened metal-O interaction, the high-entropy layered oxide has suppressed Na-O configuration with an enhanced binding energy, showing ultrastable feature after air exposure for up to 30 days. Consequently, the resultant layered oxide discloses improved structure reversibility, achieving a reversible capacity of 156 mAh g<sup>-1</sup> with a capacity retention of 90%, good rate capability and long-term cycling stability for sodium storage.
Authors
- Zhiguo Du (ORCID: https://orcid.org/0000-0001-9546-9458)
- Shubin Yang (ORCID: https://orcid.org/0000-0001-9973-9785)
- Yuxuan Gao (ORCID: https://orcid.org/0000-0003-3209-5609)
- Jiaxiang Shang (ORCID: https://orcid.org/0000-0001-9923-4090)
- Yu Shi (ORCID: https://orcid.org/0000-0003-1940-0074)
- Bin Li (ORCID: https://orcid.org/0000-0002-9093-3239)
- Ziming Wang (ORCID: https://orcid.org/0000-0003-2087-6475)
- Hao Chen (ORCID: https://orcid.org/0000-0002-5065-1712)
- Zicheng Luo
Institutions
- Beihang University (CN)
Publication Details
- Journal
- Small
- Published
- 2025-05-08
- DOI
- https://doi.org/10.1002/smll.202501933
- Citations
- 7
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 5.11
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Beijing Municipality
- Fundamental Research Funds for the Central Universities