Performance Enhancement of Gallium Nitride High Electron Mobility Transistor for High Frequency Applications Using AlInGaN as Back Barrier Layer

In this work, a novel gallium nitride/aluminium gallium nitride (GaN/AlGaN) high electron mobility transistor (HEMT) structures, such as TiN as Schottky contact, HEMT with TiN as Schottky contact, and AlInGaN barrier layer are propounded and have analyzed its DC, RF performance parameters in comparison with SiO 2 ‐based metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT) utilizing Synopsys Sentaurus technology computer‐aided design (TCAD) simulator. HEMT with TiN as Schottky contact and AlInGaN barrier layer is showing peak transconductance (G m ) of 135 mS mm −1 , which is higher than HEMT with TiN as Schottky contact, that is, 117 mS mm −1 . The device with TiN Schottky gate contact for the HEMT exhibits high cutoff frequency ( f T = 20 GHz) and maximum oscillation frequency ( f max = 94.6 GHz) when compared with SiO2‐based MOSHEMT ( f T = 12.8 GHz, f max = 27.5 GHz). Introducing the AlInGaN barrier layer for the TiN Schottky contact‐based HEMT further increased the cutoff frequency ( f T = 59.6 GHz) and maximum oscillation frequency ( f max = 324 GHz), indicating high frequency operation range for communication applications.