Impact of non-injection window on front facet temperature in laser diodes via electro-opto-thermal multiphysics simulation

• The non-injection window (NIW) structure in this work improves catastrophic optical mirror damage (COMD) power threshold. • The NIW reduces the front facet temperature rise and bandgap shrinkage. • The NIW suppresses the generation of thermal losses near the front facet. • The quasi-3D multimodal coupling method provided is strongly adaptable in high power laser diodes simulation. Catastrophic optical mirror damage (COMD) remains a critical barrier to scaling the output power of high-power laser diodes. The non-injection window (NIW) structure offers a promising solution to overcome this limitation. This study presents an analysis of high power laser diodes incorporating the NIW design. We introduce a quasi-three-dimensional analysis method that incorporates iterative electro-optical-thermal multimodal coupling. This method account for the effects of temperature on both electrical and optical performance, as well as the impact of electro-optical coupling on the heat generation. Compared to a typical 808 nm single-emitter device with a cavity length of 4 mm and a ridge-waveguide width of 105 μm, the device configuration with a 100 μm NIW demonstrates superior performance. Specifically, the front facet temperature drops by 5.4 °C, and the bandgap shrinkage is reduced by 43 %, reaching a value of 2.1 meV under a continuous wave condition at 10.8 A and room temperature. These results confirm that the NIW is effective in increasing the COMD power threshold.

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Publication Details

Journal
Optics & Laser Technology
Published
2025-05-10
DOI
https://doi.org/10.1016/j.optlastec.2025.113158
Citations
2
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
2.49
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article

Impact of non-injection window on front facet temperature in laser diodes via electro-opto-thermal multiphysics simulation

Qingkai Meng, Junyue Zhang, Wei Gao, Shunhua Wu et al.
2 citations
Optics & Laser Technology
Semiconductor Quantum Structures and Devices
2.49
article

Impact of non-injection window on front facet temperature in laser diodes via electro-opto-thermal multiphysics simulation

Qingkai Meng, Junyue Zhang, Wei Gao, Shunhua Wu, Lang Chen, Jiachen Zhang, Te Li, Jiachen Liu, Weizhou Huang, Zhenfu Wang, Lei Ling, Rui Zhang
article en
2 citations

Abstract

• The non-injection window (NIW) structure in this work improves catastrophic optical mirror damage (COMD) power threshold. • The NIW reduces the front facet temperature rise and bandgap shrinkage. • The NIW suppresses the generation of thermal losses near the front facet. • The quasi-3D multimodal coupling method provided is strongly adaptable in high power laser diodes simulation. Catastrophic optical mirror damage (COMD) remains a critical barrier to scaling the output power of high-power laser diodes. The non-injection window (NIW) structure offers a promising solution to overcome this limitation. This study presents an analysis of high power laser diodes incorporating the NIW design. We introduce a quasi-three-dimensional analysis method that incorporates iterative electro-optical-thermal multimodal coupling. This method account for the effects of temperature on both electrical and optical performance, as well as the impact of electro-optical coupling on the heat generation. Compared to a typical 808 nm single-emitter device with a cavity length of 4 mm and a ridge-waveguide width of 105 μm, the device configuration with a 100 μm NIW demonstrates superior performance. Specifically, the front facet temperature drops by 5.4 °C, and the bandgap shrinkage is reduced by 43 %, reaching a value of 2.1 meV under a continuous wave condition at 10.8 A and room temperature. These results confirm that the NIW is effective in increasing the COMD power threshold.

Optics & Laser TechnologyVol. 189
Chinese Academy of Sciences (CN), Xi'an Institute of Optics and Precision Mechanics (CN), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 12%
Semiconductor Quantum Structures and Devices
2.49
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