Composition-dependent opto electronic characteristics of rhenium chalcogenide ReS2-Se (x = 0, 1, 2) single crystals

In recent years, Rhenium-based chalcogenides have gained traction as promising materials for optoelectronic applications. The photoresponse of the as-grown rhenium chalcogenide ReS 2- x Se x ( x = 0, 1, 2) single crystals was investigated under varying incident wavelengths and bias conditions of 0 and +3 V. X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy were performed to assess the crystal structure and surface quality for photodetection applications. The photodetection properties indicate favorable potential for switching applications within the photocurrent range of 10 −9 A. Notably, the photoresponse of ReS 2 - x Se x ( x = 0, 1, 2) exhibited significant enhancement, achieving responsivity of 4.78 × 10 −3 A/W, detectivity of 9.16 × 10 9 Jones, and response time of <0.2 s. These values demonstrate the potential of these single crystals for advanced optoelectronic applications.