Application of amino acids as auxiliary reagents in chemical mechanical polishing: an in-depth review

Abstract Chemical mechanical polishing (CMP) is critical in semiconductor and integrated circuit (IC) manufacturing, with increasing demands for higher performance, including minimizing defects, enhancing planarization uniformity, and improving material removal rate (MRR). Amino acids, a key component in CMP slurries, play a significant role due to their zwitterionic nature, biocompatibility, and lower toxicity compared to traditional additives. This review examines the mechanisms through which amino acids interact with various materials such as copper, cobalt, and interlayer dielectrics, impacting MRR, surface quality, and defect rates. The review compares different amino acids under various CMP conditions, focusing on mechanisms like complexation, passivation, and optimization of material selectivity. Additionally, it discusses the sustainability of amino acid-based slurries and provides future research directions for their use in more efficient and eco-friendly semiconductor manufacturing. Graphical Abstract