Enhanced H2S Sensing properties of Cu-Doped ZnO Thin Film

In this work an enhanced H2S gas sensing response of Cu-doped ZnO thin film synthesized by chemical bath deposition method has been reported. The film exhibits a linear increase in sensitivity from 5.1 to 30.1 as H₂S concentration increases from 10 to 100 ppm. The sensor exhibited a response time ranging from 139 to 194 seconds, whereas the recovery time was between 735 and 1487 seconds for H₂S concentrations between 10 and 100 ppm. The study suggests an efficient gas sensing behavior of Cu-doped ZnO sensor with low recovery time at lower concentrations (≤ 25 ppm).