A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application

Tunneling diodes hold significant promise for future rectification in the terahertz and visible light spectra thanks to their femtosecond-scale transit-time tunneling capabilities.In this work, we present TiN/ZnO/Pt fin tunneling diodes (FTDs) with tunneling distances of 10 nm and 5 nm that demonstrate remarkable characteristics, including ultrahigh asymmetry (1.610 4 for 10 nm device and 1.610 3 for 5 nm device), high responsivity (25.3 V -1 for 10 nm device and 28.3 V -1 for 5 nm device) at zero bias, surpassing the thermal voltage limit of conventional Schottky diode and low turn-on voltage (Von) of approximately 100 mV for both devices, making them ideal for power conversion applications.Using technology computer-aided design (TCAD) simulations, the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling (FNT) and trap-assisted tunneling (TAT) under different biasing conditions, as illustrated by the corresponding energy band profiles.Furthermore, by integrating the FTDs, we design a rectifier bridge circuit that exhibits full-wave rectification behavior, validated through Spice simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.