Combined Effects of Electron Angular Distribution and Temperature on Charging Issues in Plasma Etching

ABSTRACT This study investigates the relationship between charging effects in a series of silicon dioxide mask trenches with different widths and of electron angular distributions (EADs) during the plasma etching, with particular consideration of the temperature influence. It is found that the electron–solid interaction (ESI) must be involved due to the temperature‐dependent additional energy provided by the trench. The densities of net positive and negative charges which primarily deposit at the periphery and the interior of the trench, respectively and their densities respectively exhibit a linear increase and decrease with the EAD. Moreover, net positive charges also concentrate downward as the trench width increases. Simulated spatial distribution of the electric potential shows the absolute values of the spatial positive and negative potentials initially increase and subsequently decrease with rising temperature. The paper thoroughly investigates potential mechanisms and concludes that employing the narrowest EAD does not minimize damage caused by charging issues when the temperature effect is taken into account. This study is expected to hold significant importance and provide valuable guidance for enhancing mask design.