Performance evaluation of p-NiO/n-FTO heterojunction UV photodetector

Abstract Nanostructure-based optoelectronic applications are being widely demonstrated for practical applications including UV photodetectors. The latter is considerably significant in the current world for a number of applications including biological analysis and environmental monitoring. This article depicts working procedure through which p-NiO/n-FTO heterojunction UV photodetector is fabricated along with its photo-responsive performance evaluation. The surface topographies demonstrated the existence of nanoparticle diameter of 75 nm, while a cut-off wavelength along optical bandgap of 348 nm and 3.56 eV were attained via the optical analysis, respectively. Further, the photo-responsive analysis of the fabricated photodetector exhibited diode-like behavior along ideality factor (n) of 4.56. In conjunction, the attained photo-current ( I ph ) demonstrated linear relation along with the illumination power ( R 2 = 0.965 ). The photo-responsivity ( R λ ) and photo-detectivity ( D * ) delivered values of 0.021 ( A/W ) and 3.57 × 10 14 Jones at 6 mW/cm 2 , respectively. The time-resolved profile exhibited a stable On/Off behavior along response/recovery time of 240 and 320 ms ., respectively. The proposed geometry offers a considerably cost-effective pathway for stable and fast response optoelectronic design.