Tunable Electrical Resistivity in Single-Phase VO₂ Nanowires Induced by Oxygen Vacancies under Electron Beam Irradiation

Modulating the resistivity of individual VO₂ nanowires without triggering phase transitions remains a significant challenge, but it is essential for enhancing the reliability of nanodevices and simplifying designs by avoiding structural instabilities. Here, we present an inspiring method for continuously and dynamically tuning the resistivity of individual stable M1-phase VO₂ nanowires at room temperature using low-dose, site-specific electron beam treatment. Through in-situ electrical measurements inside a TEM, we demonstrate that the resistivity of M1-phase VO₂ nanowires can be reduced by up to one order of magnitude. The resistivity change results from irradiation-induced oxygen vacancies and diffusion under the concentration gradient. Moreover, the modulation of resistivity does not compromise the mechanical robustness, ensuring the structural integrity and phase stability. These findings provide a controllable method for tuning the electronic properties of VO₂ without triggering phase transitions, offering new opportunities for the application of metal oxide nanostructures in functional nanodevices.