Comparative analysis of Si-TFET and Ge-TFET based TFET devices

In the pursuit of advancing semiconductor technology beyond the limits of traditional MOSFETs, Tunnel Field-Effect Transistors (TFETs) have evolved as promising candidates for achieving improved energy efficiency and enhanced performance. This paper presents a comprehensive comparative analysis between Silicon (Si) and Germanium (Ge) TFETs, evaluating their key characteristics and performance metrics. The analysis delves into comparing the band structures, tunneling mechanisms, and electrostatics of Si and Ge TFETs. Two-dimensional device simulations are conducted to evaluate their electrical characteristics, including ON-state current, OFF-state leakage, subthreshold swing, and threshold voltage.