Design and Optimization of RF Self Biased Ku Band LNA with Low Noise, High Gain

This paper reports on a self-biased, two-stage low noise amplifier with the application to Ku-band frequency range from 12 to 18 GHz. With the technology of 0.18 μm GaAs pHEMT technology, this LNA yields low noise as well as high gain with very low power consumption based on a self-bias architecture. The self-bias structure simplifies power management as it utilizes a single supply. The design inductively degenerates sources to improve broadband matching in addition to noise performance, thereby reducing size and complexity needed in matching networks for the wideband operations. From the simulations carried out on ADS, stability was ensured, using stability coefficients and realizing optimized input/output impedances in Smith chart tuning. The LNA achieves minimum noise figure, with a small-signal gain more than 10 dB and p1dB more than 12 dBm which show good linearity as well.