An Ultraspeed Middle Voltage and Timing Analyzer With Near-SPICE Accuracy for Charge-Recycling Buses
By stacking two data channels between VDD and VSS, Charge Recycling Buses (CRBs) halve the voltage swing on interconnects, achieving significant power savings for energy-efficient on-chip data transmission. However, the middle voltage (VMID) between the two channels may fluctuate dynamically due to the diversity of input data, which significantly impacts data propagation delay and reliability. Unfortunately, existing SPICE-based simulators do not run fast enough to identify the worst-case VMID fluctuation and propagation delay, posing great challenges in CRB design. In this paper, we present a dedicated CRB Simulator for fast and accurate VMID and timing analysis. A highly condensed VMID fluctuation model, which integrates each cycles VMID changes into a single closed-form formula, is embedded in the simulator to predict VMID values at clock edges. In addition, a speed-monitoring algorithm is developed to track the continuously changing signal propagation speed under intra-cycle VMID fluctuations for accurate delay estimation. Both the VMID fluctuation model and the delay estimation algorithm involve only a small number of arithmetic operations, thus featuring remarkably low computational complexity. Compared with HSPICE, our CRB Simulator runs > 1.0×105 times faster on average across various CRB circuits, with a VMID prediction error of only 1.3mV and a delay estimation error as low as 0.6%. The significant speed improvement combined with high accuracy makes our CRB Simulator an efficient and reliable solution for VMID and timing analysis in CRB circuit design.
Authors
- Jieyu Li (ORCID: https://orcid.org/0000-0002-9147-3756)
- Chuxiong Lin (ORCID: https://orcid.org/0000-0001-9954-9025)
- Yuxuan Qin (ORCID: https://orcid.org/0000-0003-0736-5697)
- Ling Yang (ORCID: https://orcid.org/0000-0001-7284-8180)
- Weifeng He (ORCID: https://orcid.org/0000-0002-7753-644X)
- Xiangyu Ran
Institutions
- Analog Devices (United States) (US)
- Shanghai Jiao Tong University (CN)
Publication Details
- Journal
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Published
- 2025-05-09
- DOI
- https://doi.org/10.1109/tcad.2025.3568777
- Primary Topic
- Advanced Battery Technologies Research
- Type
- article
- Field-Weighted Citation Impact
- 0.00