Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

In this paper, the frequency (f) dependence of trap generation in Si n-channel fin field-effect transistors (n-FinFETs) under AC positive bias temperature instability (PBTI) stress is investigated by fast direct-current current-voltage (DCIV) method and the discharging-based multi-pulse energy profiling (DMP) technique. The experimental results show that both interface trap generation (Δ NIT) and bulk trap generation (Δ NOT) of n-FinFET under AC PBTI stress are almost independent of the AC frequency. However, further analysis shows that Δ NOT consists of shallow traps near EC of Si and deep traps near Ev of Si. Moreover, about 22% of deep traps decrease with shallow traps increasing under 1.4V overdrive voltage (Vov) at 125∘ C with AC bias frequency increasing from 10 Hz to 1 MHz.

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Publication Details

Journal
IEEE Journal of the Electron Devices Society
Published
2025-01-01
DOI
https://doi.org/10.1109/jeds.2025.3567049
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
1.46

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article

Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

Longda Zhou, Yunfei Shi, Xiaobin He, Huaxiang Yin et al.
2 citations
IEEE Journal of the Electron Devices Society
Advancements in Semiconductor Devices and Circuit Design
1.46
article

Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs

Longda Zhou, Yunfei Shi, Xiaobin He, Huaxiang Yin, Qingzhu Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Junjie Li, Xiaolei Wang, Junfeng Li, Jun Luo, Bo Tang, Hao Chang, Wenwu Wang
article en
2 citations

Abstract

In this paper, the frequency (f) dependence of trap generation in Si n-channel fin field-effect transistors (n-FinFETs) under AC positive bias temperature instability (PBTI) stress is investigated by fast direct-current current-voltage (DCIV) method and the discharging-based multi-pulse energy profiling (DMP) technique. The experimental results show that both interface trap generation (Δ NIT) and bulk trap generation (Δ NOT) of n-FinFET under AC PBTI stress are almost independent of the AC frequency. However, further analysis shows that Δ NOT consists of shallow traps near EC of Si and deep traps near Ev of Si. Moreover, about 22% of deep traps decrease with shallow traps increasing under 1.4V overdrive voltage (Vov) at 125∘ C with AC bias frequency increasing from 10 Hz to 1 MHz.

IEEE Journal of the Electron Devices SocietyVol. 13
Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), Institute of Microelectronics (CN)
National Natural Science Foundation of China
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Openalex Percentile: Top 18%
Advancements in Semiconductor Devices and Circuit Design
1.46
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