A 50-MHz GaN Class-Φ<sub>2</sub> Power Amplifier With a CMOS-Based Resonant Gate Driver

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Publication Details

Journal
IEEE Microwave Magazine
Published
2025-05-09
DOI
https://doi.org/10.1109/mmm.2024.3495616
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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article

A 50-MHz GaN Class-Φ2 Power Amplifier With a CMOS-Based Resonant Gate Driver

Juan Rivas-Davila, C. H. Lin, Zhechi Ye
1 citations
IEEE Microwave Magazine
GaN-based semiconductor devices and materials
1.26
article

A 50-MHz GaN Class-Φ2 Power Amplifier With a CMOS-Based Resonant Gate Driver

Juan Rivas-Davila, C. H. Lin, Zhechi Ye
article en
1 citations

Abstract

Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.

IEEE Microwave MagazineVol. 26(6)
Stanford University (US)
Affordable and clean energy
Openalex Percentile: Top 22%
GaN-based semiconductor devices and materials
1.26
DOISourceOpenAlex
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A 50-MHz GaN Class-Φ<sub>2</sub> Power Amplifier With a CMOS-Based Resonant Gate Driver — Juan Rivas-Davila, C. H. Lin, et al. · IEEE Microwave Magazine (2025) | TGRS Research Map | TGRS