Preparation of solid electrolyte Ta-substituted Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> epitaxial thin film using LiOH-flux liquid phase epitaxy

Solid electrolyte Ta-substituted Li7La3Zr2O12 (LLZTO) epitaxial thin films were grown using LiOH-flux liquid phase epitaxy at 600 C under the flow of N2 and H2O vapor mixture.Prior to the liquid phase epitaxy, amorphous La-Zr-Ta-O thin films were deposited on garnet-type Ga3Gd5O12 (GGG) substrates by dynamic aurora pulsed laser deposition for the thickness limitation and uniform film formation.Obtained thin films after liquid phase epitaxy, include Li content by x-ray photoemission spectroscopy.The epitaxial growth of LLZTO thin films on GGG (001), ( 110) and ( 111) substrates were confirmed by pole figures.The thin films had relatively low out-of-plane orientation degree despite liquid phase method.The surface observation reveals that the thin film surfaces consist of radially spreading regions with about 5-20 m, which implies that the growth condition in this study was at higher supersaturation degree.

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Publication Details

Journal
Journal of the Ceramic Society of Japan
Published
2025-05-09
DOI
https://doi.org/10.2109/jcersj2.25002
Citations
1
Primary Topic
Advanced Battery Materials and Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

Preparation of solid electrolyte Ta-substituted Li7La3Zr2O12 epitaxial thin film using LiOH-flux liquid phase epitaxy

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1 citations
Journal of the Ceramic Society of Japan
Advanced Battery Materials and Technologies
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article

Preparation of solid electrolyte Ta-substituted Li7La3Zr2O12 epitaxial thin film using LiOH-flux liquid phase epitaxy

Naoki Wakiya, Kosuke Ono, Masafumi Moriya, Naonori Sakamoto, Takahiko Kawaguchi
article en
1 citations

Abstract

Solid electrolyte Ta-substituted Li7La3Zr2O12 (LLZTO) epitaxial thin films were grown using LiOH-flux liquid phase epitaxy at 600 C under the flow of N2 and H2O vapor mixture.Prior to the liquid phase epitaxy, amorphous La-Zr-Ta-O thin films were deposited on garnet-type Ga3Gd5O12 (GGG) substrates by dynamic aurora pulsed laser deposition for the thickness limitation and uniform film formation.Obtained thin films after liquid phase epitaxy, include Li content by x-ray photoemission spectroscopy.The epitaxial growth of LLZTO thin films on GGG (001), ( 110) and ( 111) substrates were confirmed by pole figures.The thin films had relatively low out-of-plane orientation degree despite liquid phase method.The surface observation reveals that the thin film surfaces consist of radially spreading regions with about 5-20 m, which implies that the growth condition in this study was at higher supersaturation degree.

Journal of the Ceramic Society of JapanVol. 133(7)
Shizuoka University (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 29%
Advanced Battery Materials and Technologies
0.73
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