Photoelectric properties of heterojunctions based on semiconducting metal oxides and indium selenide
The results of a comparison of the photosensitivity of heterojunctions based on InSe layered semiconductor and various wide band gap oxides (Mn2O3, CuFeO2, Fe2O3) produced by the spray pyrolysis method are given. The photoresponse of the heterojunction irradiated from the side of metal oxides was studied in the photon energy range of 1.2÷3 eV. The possibility of the formation of In2Se3 phase between of InSe and oxides and its effect on the photosensitivity of the heterostructures have been considered.
Authors
- A. V. Zaslonkin (ORCID: https://orcid.org/0009-0001-4712-2895)
- I. G. Tkachuk (ORCID: https://orcid.org/0000-0002-2086-8259)
- I. G. Orletskii
- Z. D. Kovalyuk (ORCID: https://orcid.org/0000-0003-3895-4304)
- V. І. Ivanov (ORCID: https://orcid.org/0000-0003-3956-6354)
- B.V. Kusnir
Publication Details
- Journal
- Physics and Chemistry of Solid State
- Published
- 2025-05-09
- DOI
- https://doi.org/10.15330/pcss.26.2.231-234
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00