A Design of 1.2 kV SiC MOSFET with Split-Gate for Improvement of Breakdown Characteristics and HF-FOM

Authors

Jun-Ho Park (ORCID: https://orcid.org/0000-0001-5518-1919)
Minu Kim (ORCID: https://orcid.org/0000-0002-6189-033X)
Hyowon Yoon (ORCID: https://orcid.org/0000-0002-9904-7102)
Kanghee Shin
Dongkyun Kim (ORCID: https://orcid.org/0000-0002-4222-7444)
Ogyun Seok

Institutions

Kumoh National Institute of Technology (KR)

Publication Details

Published: 2025-05-09
DOI: https://doi.org/10.54985/peeref.2505p1407376
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article

Funders

Ministry of Trade, Industry and Energy
Korea Institute for Advancement of Technology

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article

A Design of 1.2 kV SiC MOSFET with Split-Gate for Improvement of Breakdown Characteristics and HF-FOM

Jun-Ho Park, Minu Kim, Hyowon Yoon, Kanghee Shin et al.

May 9, 2025

4 links

Silicon Carbide Semiconductor Technologies

article

A Design of 1.2 kV SiC MOSFET with Split-Gate for Improvement of Breakdown Characteristics and HF-FOM

Jun-Ho Park, Minu Kim, Hyowon Yoon, Kanghee Shin, Dongkyun Kim, Ogyun Seok

May 9, 2025article en

Abstract

No abstract available for this paper.

Kumoh National Institute of Technology (KR)

Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology

Silicon Carbide Semiconductor Technologies

DOI Open Access PDF OpenAlex

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A Design of 1.2 kV SiC MOSFET with Split-Gate for Improvement of Breakdown Characteristics and HF-FOM — Jun-Ho Park, Minu Kim, et al. · (2025) | TGRS Research Map | TGRS