Two-dimensional semiconductors survive and thrive in outer space

Outer space is the vast expanse that exists beyond Earth's atmosphere, stretching between celestial bodies.It contains extremely low particle densities, forming a near-perfect vacuum composed primarily of hydrogen and helium plasma.This space is permeated by electromagnetic radiation, cosmic rays, neutrinos, magnetic fields, and interstellar dust.Surface of space objects, if not thermally managed, would also experience a wide temperature swing.Survival of electronics in such harsh environments in outer space is critical for space exploration.Continuous exposure to ionizing radiation, such as from the Van Allen belts, can cause gradual degradation of Si-based electronic components, leading to increased leakage currents, threshold shifts, and reduced functionality.To enhance their endurance, various techniques like radiationhardened designs, shielding, and the use of alternative radiation-hard materials like silicon carbide (SiC) are employed [1].

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Publication Details

Journal
National Science Review
Published
2025-05-05
DOI
https://doi.org/10.1093/nsr/nwaf181
Primary Topic
Ga2O3 and related materials
Type
article
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article

Two-dimensional semiconductors survive and thrive in outer space

Junqiao Wu
National Science Review
Ga2O3 and related materials
article

Two-dimensional semiconductors survive and thrive in outer space

Junqiao Wu
article en

Abstract

Outer space is the vast expanse that exists beyond Earth's atmosphere, stretching between celestial bodies.It contains extremely low particle densities, forming a near-perfect vacuum composed primarily of hydrogen and helium plasma.This space is permeated by electromagnetic radiation, cosmic rays, neutrinos, magnetic fields, and interstellar dust.Surface of space objects, if not thermally managed, would also experience a wide temperature swing.Survival of electronics in such harsh environments in outer space is critical for space exploration.Continuous exposure to ionizing radiation, such as from the Van Allen belts, can cause gradual degradation of Si-based electronic components, leading to increased leakage currents, threshold shifts, and reduced functionality.To enhance their endurance, various techniques like radiationhardened designs, shielding, and the use of alternative radiation-hard materials like silicon carbide (SiC) are employed [1].

National Science ReviewVol. 12(6)
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Ga2O3 and related materials
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