Possible options for improvement in performance of GaAsSb/InGaAs double quantum well heterostructure operating in mid-infrared region

This study explores innovative approaches to improving the performance of GaAsSb/InGaAs double quantum well (DQW) heterostructures for mid-infrared applications. By optimizing the material compositions, quantum well (QW) configurations and interface engineering, novel strategies to achieve superior optical absorption spectra have been proposed. Efforts were made to explore potential enhancements in the optoelectronic performance of the designed QW heterostructure (35[Formula: see text]nm width) with type-II alignment. A successful trial has been made to improve the absorption characteristics by varying the width of the well and barrier regions along with optimized doping in these regions (i.e., [Formula: see text]doping in the well and [Formula: see text]doping in the barrier region with optimized doping concentration) with justified reason. Possibly, the results obtained for the DQW heterostructure of optimized geometry with variable width and doping can be useful for designing and manufacturing the infrared photodetector with improved performance that can be capable of addressing crucial environmental concerns. The findings present potential advancements in tailoring band alignment and minimizing nonradiative recombination, addressing critical challenges in mid-infrared optoelectronic device development.