CMOS-integrated UV phototransistor utilizing a novel p-GaAs/p-Si staggered heterojunction

This paper introduces a high-performance, CMOS-compatible ultraviolet (UV) phototransistor utilizing a novel staggered heterojunction between p-type Gallium Arsenide (GaAs) and p-type Silicon (Si). This innovative device design overcomes limitations in traditional silicon-based UV photodetectors by employing a p-GaAs light-absorbing channel, enabling efficient photon-to-current conversion. The device, operating in the subthreshold regime, demonstrates exceptional performance characteristics, including a high responsivity of 138 m A / W at 3 V bias, a linear dynamic range of 220 d B m , near-zero dark current, and a remarkable photo-to-dark current ratio on the order of 1 0 11 . These findings highlight the potential of the presented heterostructure approach for achieving high-sensitivity and low-noise UV detection, with a clear path towards seamless integration into existing electronic circuits and advanced sensing applications. • Developed a novel CMOS-compatible ultraviolet (UV) phototransistor based on a staggered p-GaAs/p-Si heterojunction architecture, overcoming limitations of traditional silicon-based devices. • Achieved a high responsivity of 138 mA/W at 3 V bias, demonstrating superior light-to-current conversion for efficient UV detection. • Implemented a subthreshold operation regime, which reduces power consumption while maintaining high sensitivity for a highly energy-efficient device. • Demonstrated a remarkable linear dynamic range of 220 dBm, enabling precise measurements over a broad range of UV light intensities. • Realized a photo-to-dark current ratio on the order of 1 0 11 , indicative of highly sensitive and efficient UV detection capabilities. • The design is fully compatible with standard CMOS fabrication processes, enabling seamless integration into existing electronic circuits and mass-production techniques.