Infrared photoconductive detectors based on PbSe colloidal quantum dots responsive up to 3.3 <b>μ</b>m

Photoconductive (PC) devices based on PbSe colloidal quantum dots with absorption peaks up to 3.3 μ were fabricated and characterized. The devices were sensitized by controlled oxidation, and their effect on the properties of the devices was studied. The excitation wavelength was 2.04 μm, the power incident on the interdigitated circuit of 1 × 1 mm was up to 0.44 mW, and the measurements were done at room temperature. The responsivity of the devices at 10 V bias exceeded 10 A/W (EQE up to about 700%), and the specific detectivity exceeded 10 10 Jones.