Non-volatile and multistate terahertz response in semi-floating-gate graphene field-effect transistors

Two-dimensional (2D) material photodetector based on semi-floating gate (SFG) structure is expected to achieve multiple functions of information sensing, storage, and processing in a single device. Here, we demonstrated a terahertz (THz) detector based on the graphene/h-BN/graphene SFG structure. The device exhibits an excellent memory behavior and a gate-controlled non-volatile and multistate photothermoelectric (PTE) THz response. A theoretical model is established to systematically investigate the memory and PTE response characteristics, and the numerical results are well consistent with the experimental results. Our research provides valuable insights into the complex optoelectronic behavior of 2D material Semi-Floating-Gate Graphene Field-Effect Transistors (SFG-FETs) and paves the way for the realization of multifunctional photodetectors based on SFG-FET structures.

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Publication Details

Journal
Optics Express
Published
2025-05-08
DOI
https://doi.org/10.1364/oe.561649
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

Funders

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article

Non-volatile and multistate terahertz response in semi-floating-gate graphene field-effect transistors

Shichen Zhang, Xuguang Guo, Yating Cai, Jingjing Fu et al.
2 citations
Optics Express
2D Materials and Applications
1.04
article

Non-volatile and multistate terahertz response in semi-floating-gate graphene field-effect transistors

Shichen Zhang, Xuguang Guo, Yating Cai, Jingjing Fu, X. Y. Zhang, Yiming Zhu, Mengjian Xu, C. Wen, Fei He, Miao Cai, Shuo Lei, Qingyang Wang, Shicong Hou, Shun Tang, Yifan Yao
article en
2 citations

Abstract

Two-dimensional (2D) material photodetector based on semi-floating gate (SFG) structure is expected to achieve multiple functions of information sensing, storage, and processing in a single device. Here, we demonstrated a terahertz (THz) detector based on the graphene/h-BN/graphene SFG structure. The device exhibits an excellent memory behavior and a gate-controlled non-volatile and multistate photothermoelectric (PTE) THz response. A theoretical model is established to systematically investigate the memory and PTE response characteristics, and the numerical results are well consistent with the experimental results. Our research provides valuable insights into the complex optoelectronic behavior of 2D material Semi-Floating-Gate Graphene Field-Effect Transistors (SFG-FETs) and paves the way for the realization of multifunctional photodetectors based on SFG-FET structures.

Optics ExpressVol. 33(11)
Tongji University (CN)
Higher Education Discipline Innovation Project, General Administration of Customs, Shanghai Key Laboratory of Intelligent Information Processing, National Outstanding Youth Science Fund Project of National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 26%
2D Materials and Applications
1.04
DOIOpen Access PDFOpenAlex
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