INVESTIGATION OF MEMRISTIVE NANOSCALE STRUCTURES WITH PROFILED INTERFACEFOR NEUROMORPHIC ELECTRONICS

The article presents the results of the development of nanoscale memristive structures, the applicationof which is promising for the hardware implementation of artificial intelligence systems. A design of amemristive cell based on a titanium oxide film with a thickness ranging from 3 to 50 nm is proposed.The upper electrode of the cell features a profiled structure in the form of two high-aspect-ratio nanoscaletip structures (HANTS), where one tip has a radius of 10 nm, and the radius of the second tip varies in therange of 10 to 50 nm. Platinum was chosen as the material for the upper electrode due to its unique physicochemicalproperties, including high chemical inertness across a wide range of temperatures and aggressiveenvironments, low electrical resistivity, and resistance to oxidation. These characteristics makeplatinum an optimal material for use in electronic devices and sensor systems where long-term stabilityand minimal energy losses during signal transmission are required. The results of modeling the electricfield strength distribution in the interelectrode gap of the memristive cell are presented. The modeling was performed using COMSOL Multiphysics software, which solves systems of nonlinear partial differentialequations using the finite element method, with a potential difference of 5 V between the electrodes. Basedon the modeling results, the dependencies of the electric field strength on the geometric parameters of thememristive cell were obtained and analyzed. Local enhancement of the electric field strength was identifiedalong the perimeter of the oxide-HANTS interface. The increase in the non-uniformity of the electricfield strength grows with the thickness of the oxide film and can reach 13.4%. The obtained results can beused in the development of neuromorphic electronic components for robotic systems and artificial intelligencesystems based on memristors