Reconfigurable Floating‐Gate Devices with Ambipolar ReSe₂ Channel: Dual‐Mode Storage, NMOS‐PMOS Transformation, Logic Functions, Synapse Simulations, Positive and Negative Photoconductive Effects

Abstract 2D floating‐gate (FG) devices with reconfigurable functions are gradually replacing traditional FG devices, and are highly likely to become the core components in future integrated sensing‐memory‐computation (SMC) chips. Only the traditional 2D FG devices with complex structures can achieve reconfigurable functions. In this work, a reconfigurable multifunctional floating‐gate (MFFG) device is proposed with the simple ReSe 2 /h‐BN/Gr heterostructure full FG structure, integrating a plethora of functions, including non‐volatile dual‐mode storage and dynamic NMOS‐PMOS transformation, non‐volatile and volatile photoelectric memory, frequency doubling and reconfigurable logic of “AND”, “NOR”, and “XNOR”. The ambipolar properties of 2D ReSe 2 facilitate the continuous write and erase using single polarity pulses. This device shows impressive performance metrics, with large memory windows (>70%), high reading current on/off ratios (>10 4 ), exceptional endurance (>3000 cycles), and retention (>1000 s) in both P‐type and N‐type memory modes. The symmetrical dual‐mode storage effectively enhances multi‐state storage capacity to 120 states. A more unique characteristic is the coexistence of non‐volatile negative photoconductivity and volatile positive photoconductivity. Furthermore, the high recognition accuracies (96.5% for MNIST and 89.2% for F‐MNIST) show great development potential for MFFG device as artificial synapse. The excellent performance of the MFFG device expands its application prospect in next‐generation SMC chips.