High‐Performance Field‐Effect Transistors and Phototransistors Array Based on Solution‐Processed Quasi‐1D Van der Waals Ta ₂ Pd ₃ S ₈ Crystals

Abstract Quasi‐1D van der Waals (vdW) materials, particularly the M 2 N 3 X 8 family, have emerged as promising candidates for nanoelectronic platforms due to their excellent carrier transport properties and structural diversity. Among these, Ta 2 Pd 3 S 8 , a theoretically proposed member, has remained unexplored. In this study, Ta 2 Pd 3 S 8 is successfully synthesized for the first time and optimize its exfoliation into nanowires through liquid phase exfoliation, achieving scalable production using a liquid cascade centrifugation technique. Two types of field‐effect transistors (FET) devices are fabricated: single nanowire devices and network structure arrays. The single nanowire FETs demonstrate high field‐effect mobility of up to 27.3 cm 2 V −1 s −1 with an I on / I off of 4.31 × 10 4 , while the network devices exhibit uniform performance across 5 × 5 arrays. Furthermore, optoelectronic characterization reveals excellent photodetection capabilities, including a responsivity of 322.40 A W −1 for single nanowire devices and 1.85 mA W −1 for network structures. These results highlight the potential of Ta 2 Pd 3 S 8 as a versatile material for low‐dimensional electronic and optoelectronic applications, paving the way for its integration into next‐generation multifunctional devices.