Strong Anisotropic Magnetotransport in One-Dimensional Bi₂O₂Te Kondo System via Intercalated Oxidation

Fundamental principles and material realization of electronic state regulation are attracting multidisciplinary interest, where phase engineering and structural modification offer promising strategies for identifying suitable material systems. Herein, Bi₂O₂Te nanowires epitaxially grown along unconventional (013) planes, with randomly intercalated oxidation of (Te)^2- layers, are constructed featuring localized magnetic moments. Anomalous non-Ohmic magnetotransport manifesting universal conductance fluctuation reveals the characteristics of a disordered electronic system. Negative magnetoresistance emerges under arbitrary magnetic field orientations, with Kondo scattering indicated as the dominant mechanism. As in-plane transport of Bi₂O₂Te yields positive magnetoresistance sensitive to the perpendicular field component, a three-dimensional tunable magnetotransport including positive/negative magnetoresistance and an intermediate state is achieved by adjusting the competition between the two mechanisms. These results position Bi₂O₂Te as a potential platform for studying the regulation of electronic states and elucidating the microscopic origin of negative magnetoresistance in nonmagnetic disordered systems.