Power device and circuit parasitic inductance analysis and research

With the development of power electronic equipment, the switching frequency and power level of power devices increase, and the parasitic inductance has a significant impact on them. Therefore, this paper studies the influence of parasitic inductance on the switching transient characteristics, electromagnetic interference and power loss of IGBT. Through simulation and experiment, the switching transient process of IGBT under different parasitic inductances is analyzed, including the change situations such as voltage overshoot, electromagnetic interference and switching loss, and the conclusion that the parasitic inductance affects the working characteristics and related parameters of the device is drawn, providing theoretical basis and practical guidance for improving the safety limit and working efficiency of the device.