An Indirect ToF Sensor With In-Pixel Adaptive ΔΣ -Scheme for Background Light Rejection and Floating Diffusion Mismatch Cancellation
This article presents a 160 × 120 indirect time-of-flight (iToF) sensor with an in-pixel adaptive ΔΣ-scheme that controls the number of sub-integration times adaptively to mitigate large background light (BGL) with alleviated reset noise penalty. A pixel-level charge amplifier is employed to suppress common-mode BGL charge, while the adaptive ΔΣ-scheme automatically selects the number of charge-subtraction operations with respect to BGL intensity to reduce the noise contribution from the charge amplifier. Additionally, an in-pixel floating diffusion (FD) swapping technique is proposed to alleviate non-idealities due to FD mismatches, such as depth linearity degradation and residual BGL charge. The proposed iToF sensor, fabricated in a 110-nm backside illumination CMOS image sensor (CIS) process, acquires depth images from 0.3 to 2.9 m with less than 2.7% depth noise and 2.1% non-linearity in a 10-ms integration time, offering 30 fps with a 50-MHz modulation frequency. The proposed FD swapping improves the depth non-linearity from 3.8% to 1.5% for the depth range of 0.6–3 m. The proposed adaptive ΔΣ-scheme supports BGL resilience up to a BGL optical power of 3.3 mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 940 nm with a 30-nm bandwidth (BW) optical bandpass filter, and the prototype has been successfully demonstrated outdoors under more than 60-klx sunlight.
Authors
- Dahwan Park (ORCID: https://orcid.org/0000-0001-8672-0890)
- Seonghyeok Park (ORCID: https://orcid.org/0000-0001-5341-2293)
- Jubin Kang (ORCID: https://orcid.org/0000-0003-0696-3097)
- Insang Son (ORCID: https://orcid.org/0000-0001-6878-1358)
- Jung-Hye Hwang (ORCID: https://orcid.org/0000-0003-3546-3227)
- Yongjae Park (ORCID: https://orcid.org/0000-0002-6093-9330)
- Seong‐Jin Kim (ORCID: https://orcid.org/0000-0002-9353-5148)
Institutions
- SK Group (South Korea) (KR)
- Solid (South Korea) (KR)
- Ulsan National Institute of Science and Technology (KR)
Publication Details
- Journal
- IEEE Journal of Solid-State Circuits
- Published
- 2025-05-07
- DOI
- https://doi.org/10.1109/jssc.2025.3564624
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- SK Hynix