Highly efficient light-emitting diodes via self-assembled InP quantum dots

Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 10<sup>5 </sup>cd m<sup>-2</sup>), along with considerable stability (extrapolated T<sub>50</sub> lifetime of 4026 hours at 1000 cd m<sup>-2</sup>). For a 2 × 3 cm<sup>2</sup> InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.

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Publication Details

Journal
Nature Communications
Published
2025-05-07
DOI
https://doi.org/10.1038/s41467-025-59527-2
Citations
25
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
12.95

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article

Highly efficient light-emitting diodes via self-assembled InP quantum dots

Yuyan Zhao, Bingqiang Ji, Hanfei Gao, Hui Li et al.
25 citations
Nature Communications
Quantum Dots Synthesis And Properties
12.95
article

Highly efficient light-emitting diodes via self-assembled InP quantum dots

Yuyan Zhao, Bingqiang Ji, Hanfei Gao, Hui Li, Yuchen Wu, Lei Jiang, Wen Wen, Jingyuan Zhang, Yunjun Wang
article en
25 citations

Abstract

Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 10<sup>5 </sup>cd m<sup>-2</sup>), along with considerable stability (extrapolated T<sub>50</sub> lifetime of 4026 hours at 1000 cd m<sup>-2</sup>). For a 2 × 3 cm<sup>2</sup> InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.

Nature CommunicationsVol. 16(1)
Suzhou University of Science and Technology (CN), Technical Institute of Physics and Chemistry (CN), Nanopolis Suzhou (China) (CN), University of Chinese Academy of Sciences (CN), Shanxi Datong University (CN), Beihang University (CN)
National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Shanxi Province Science Foundation for Youths, National Key Research and Development Program of China, Youth Innovation Promotion Association
Openalex Percentile: Top 1%
Quantum Dots Synthesis And Properties
12.95
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