755 nm InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot laser with polarization-dependent emission from type-I and type-II band alignments
InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot (QD) lasers with variable polarization are demonstrated through the tailoring of band alignment. Different band alignments of type-I and type-II are realized during QD growth with varied parameters. The energy shift of type-I structure is observed to be much lower than that of type-II. Furthermore, type-I and type-II band ridge waveguide lasers were investigated. For type-I and type-II band lasers, the lowest thresholds are 0.37 and 0.40 kA/cm<sup>2</sup>, respectively, and different polarization characteristics are achieved. We observed transverse electric (TE) and transverse magnetic (TM) polarized light resulted from different band alignments, and the degree of polarization (DOP) reached 80%. These results indicate that InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> QDs can be potentially used in devices with desired polarization.
Authors
- Kei May Lau (ORCID: https://orcid.org/0000-0002-7713-1928)
- Wen Gu (ORCID: https://orcid.org/0000-0001-7248-3687)
- Ying Xue (ORCID: https://orcid.org/0000-0001-6622-9762)
- Benyang Zhao (ORCID: https://orcid.org/0000-0002-4747-783X)
Publication Details
- Journal
- Optics Express
- Published
- 2025-05-07
- DOI
- https://doi.org/10.1364/oe.563529
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Innovation and Technology Fund