Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe <sub>2</sub>

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin-valley locking effect, in which carriers occupying the <i>K</i> and <i>K</i>' valleys of the reciprocal space must have opposite spins. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of WSe<sub>2</sub> to 1D via electrostatic confinement, we demonstrate that spin-valley locking and strong hole-hole interactions lead to a ferromagnetic state where hole transport is spin-valley polarized, even without an applied magnetic field. A massive Dirac fermion model in the Hartree-Fock approximation reveals that many-body hole-exchange interactions lead to this polarized ground-state. This observation opens the possibility of implementing a robust and stable valley-polarized system, essential in valleytronic applications.

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Publication Details

Journal
Science Advances
Published
2025-05-07
DOI
https://doi.org/10.1126/sciadv.adu4696
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04
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article

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe 2

Alex Bogan, Takashi Taniguchi, Kenji Watanabe, Louis Gaudreau et al.
2 citations
Science Advances
2D Materials and Applications
1.04
article

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe 2

Alex Bogan, Takashi Taniguchi, Kenji Watanabe, Louis Gaudreau, Pedro Barrios, Adina Luican‐Mayer, Paweł Hawrylak, Justin Boddison-Chouinard, Daniel Miravet, Jarosław Pawłowski, Marek Korkusiński, P. Waldron
article en
2 citations

Abstract

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin-valley locking effect, in which carriers occupying the <i>K</i> and <i>K</i>' valleys of the reciprocal space must have opposite spins. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of WSe<sub>2</sub> to 1D via electrostatic confinement, we demonstrate that spin-valley locking and strong hole-hole interactions lead to a ferromagnetic state where hole transport is spin-valley polarized, even without an applied magnetic field. A massive Dirac fermion model in the Hartree-Fock approximation reveals that many-body hole-exchange interactions lead to this polarized ground-state. This observation opens the possibility of implementing a robust and stable valley-polarized system, essential in valleytronic applications.

Science AdvancesVol. 11(19)
Wrocław University of Science and Technology (PL), Argonne National Laboratory (US), University of Ottawa (CA), National Institute for Materials Science (JP), National Research Council Canada (CA), AGH University of Krakow (PL)
Sustainable cities and communities
Openalex Percentile: Top 26%
2D Materials and Applications
1.04
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