Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing

Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor-compatible approach using focused ion beam irradiation for buried ultrathin films' engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.

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Publication Details

Journal
Science Advances
Published
2025-05-07
DOI
https://doi.org/10.1126/sciadv.ads9744
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing

Ilya A. Ryzhikov, Vladimir V. Echeistov, Nikita D. Korshakov, A. V. Yanilkin et al.
2 citations
Science Advances
Semiconductor materials and devices
1.46
article

Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing

Ilya A. Ryzhikov, Vladimir V. Echeistov, Nikita D. Korshakov, A. V. Yanilkin, E. V. Zikiy, Elizaveta A. Krivko, Elizaveta I. Malevannaya, Viktor I. Polozov, Dmitry O. Moskalev, Ilya A. Rodionov, Nikita S. Smirnov, Aleksei R. Matanin, A. V. Lebedev, Аnton I. Ivanov, Igor S. Korobenko, Daria A. Moskaleva, M. Teleganov, Nikolai M. Zhitkov, Ruslan V. Romashkin, Aleksander V. Andriyash, Anna Solovieva, Dmitry A. Mikhalin
article en
2 citations

Abstract

Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor-compatible approach using focused ion beam irradiation for buried ultrathin films' engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.

Science AdvancesVol. 11(19)
Bauman Moscow State Technical University (RU), All Russia Research Institute of Automatics (RU), Institute of Theoretical and Applied Electrodynamics (RU)
Affordable and clean energy
Openalex Percentile: Top 18%
Semiconductor materials and devices
1.46
DOIOpen Access PDFOpenAlex
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