Design and Development of C-Band LNA MMIC Using 250 nm GaN HEMT Technology

This paper expounds on the design & development of C- band (5.4- 5.9 GHz) AlGaN/GaN-based Low Noise Amplifier MMIC using a 250 nm UMS GH25 process. In this work, a common Source (CS) topology has been used to design the two stages of LNA MMIC. Designed LNA is fabricated and measured results have been discussed in detail in this paper. In this design, GaN HEMT device is used and operated with a drain bias of 15V and gate bias of -2.8V. The total current consumption of this LNA is 125mA. In designing of this C-band LNA, the main focus was concentrated on the noise figure and gain. The measured gain of this C-band LNA MMIC is 20.5 dB with a gain flatness of ±0.5 dB and has a noise figure of less than 1.35 dB. Input return loss exceeds 14 dB and output return loss is better than 13 dB. The measured P1dB of this LNA MMIC is 25.5 dBm. This LNA MMIC has been designed in a die size of 3.2mm X 2.1mm on 100 µm SiC substrate.