Design of High Performance MOSFET Amplifier in Subthreshold Region

With the increasing demand for low-power devices, subthreshold MOSFET transistors, which operate at power levels significantly lower than conventional MOSFETs, have garnered considerable interest. Subthreshold MOSFET amplifiers are widely applicable in low-power and low-noise applications, such as the Internet of Things (IoT). This paper explores how to use MOSFETs to compose high-performance amplifier circuits. The paper mainly discusses the gain, linearity, bandwidth, frequency response and power consumption of the designed circuit, comparing it with simpler MOSFET amplifier circuits as well to reflect its advantages. Using LTspice for simulation, this paper evaluates the circuit's performance under ideal conditions. The simulation results find that the gain of the finally designed circuit is 58.3 dB, the power consumption is 1.1 W, the bandwidth is 424 kHz and the linearity is 10 dBm. It can be seen that the performance of the circuit is good, and it can better meet the needs of most applications.