Research on Recent Advances in Semiconductor Materials for Power Electronics
In recent years, the electric vehicle (EV) market has expanded rapidly, and semiconductor materials play a vital role in improving the power conversion efficiency of EV chargers. The frequency of use of photonic chips is also gradually increasing. This study explores the advantages and challenges of using gallium nitride (GaN) and indium antimonide (InSb) in semiconductor power electronics. In addition, the study compares semiconductor materials such as silicon (Si), gallium arsenide (GaAs), lithium niobate (LiNbO), and graphene, focusing on their performance in the electronic and optical fields. These materials play a crucial role in photonic chip technologies. The study used R software for analysis and highlights the importance of R software for data analysis and visualization, providing clear comparative insights into the properties of each material. The study also identifies key areas for future research, including the integration of GaN and InSb in practical power electronics applications, the need for performance data under real-world conditions, and the environmental sustainability of these materials.
Authors
- Feiyu Ren
Publication Details
- Journal
- Applied and Computational Engineering
- Published
- 2025-05-06
- DOI
- https://doi.org/10.54254/2755-2721/2025.22548
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00