Research on Recent Advances in Semiconductor Materials for Power Electronics

In recent years, the electric vehicle (EV) market has expanded rapidly, and semiconductor materials play a vital role in improving the power conversion efficiency of EV chargers. The frequency of use of photonic chips is also gradually increasing. This study explores the advantages and challenges of using gallium nitride (GaN) and indium antimonide (InSb) in semiconductor power electronics. In addition, the study compares semiconductor materials such as silicon (Si), gallium arsenide (GaAs), lithium niobate (LiNbO), and graphene, focusing on their performance in the electronic and optical fields. These materials play a crucial role in photonic chip technologies. The study used R software for analysis and highlights the importance of R software for data analysis and visualization, providing clear comparative insights into the properties of each material. The study also identifies key areas for future research, including the integration of GaN and InSb in practical power electronics applications, the need for performance data under real-world conditions, and the environmental sustainability of these materials.

Authors

Publication Details

Journal
Applied and Computational Engineering
Published
2025-05-06
DOI
https://doi.org/10.54254/2755-2721/2025.22548
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Research on Recent Advances in Semiconductor Materials for Power Electronics

Feiyu Ren
Applied and Computational Engineering
Semiconductor materials and interfaces
article

Research on Recent Advances in Semiconductor Materials for Power Electronics

Feiyu Ren
article en

Abstract

In recent years, the electric vehicle (EV) market has expanded rapidly, and semiconductor materials play a vital role in improving the power conversion efficiency of EV chargers. The frequency of use of photonic chips is also gradually increasing. This study explores the advantages and challenges of using gallium nitride (GaN) and indium antimonide (InSb) in semiconductor power electronics. In addition, the study compares semiconductor materials such as silicon (Si), gallium arsenide (GaAs), lithium niobate (LiNbO), and graphene, focusing on their performance in the electronic and optical fields. These materials play a crucial role in photonic chip technologies. The study used R software for analysis and highlights the importance of R software for data analysis and visualization, providing clear comparative insights into the properties of each material. The study also identifies key areas for future research, including the integration of GaN and InSb in practical power electronics applications, the need for performance data under real-world conditions, and the environmental sustainability of these materials.

Applied and Computational EngineeringVol. 144(1)
Openalex Percentile: Top 93%
Semiconductor materials and interfaces
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Research on Recent Advances in Semiconductor Materials for Power Electronics — Feiyu Ren · Applied and Computational Engineering (2025) | TGRS Research Map | TGRS