Rhenium-Induced Negative Magnetoresistance in Monolayer Graphene
The impact of rhenium doping on the transport properties and electron localization in monolayer graphene was experimentally investigated. In this study, we report the emergence of unsaturated negative magnetoresistance in Re-doped graphene devices, which is observed exclusively at low temperatures. Moreover, angle-dependent measurements reveal a pronounced anisotropy in the negative magnetoresistance. This phenomenon is attributed to the disorder and localized magnetic moments introduced by Re doping, which lead to charge carrier localization and are accompanied by substantial magnetocrystalline anisotropy energy.
Authors
- Yuxiang Feng
- Wei Li (ORCID: https://orcid.org/0000-0003-4036-467X)
- Jing Li (ORCID: https://orcid.org/0000-0002-7295-3033)
- Ying Zhang (ORCID: https://orcid.org/0000-0001-8778-7659)
- Jiali You (ORCID: https://orcid.org/0000-0002-0830-7088)
- Yangyang Liu (ORCID: https://orcid.org/0000-0002-8581-2045)
- Zijie Huang (ORCID: https://orcid.org/0000-0003-0742-6082)
Institutions
- Chinese Academy of Sciences (CN)
- Hefei Institutes of Physical Science (CN)
- High Magnetic Field Laboratory (CN)
- Huainan Normal University (CN)
- Chaohu University (CN)
Publication Details
- Journal
- Magnetochemistry
- Published
- 2025-05-06
- DOI
- https://doi.org/10.3390/magnetochemistry11050039
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- China Postdoctoral Science Foundation
- University of Science and Technology of China