Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing

The development of high-quality, stable, and cost-effective micro/nano dual-band lasing remains a crucial challenge for multifunctional applications. In this study, we demonstrate high-Q dual-band WGM lasing in an independent core-shell microdisk, emitting both ultraviolet and blue lasing. The GaN-based microdisk with InGaN/GaN quantum wells serves as the core, while a SiO 2 layer is deposited on the sidewalls to construct the core-shell microdisk. This independent structure is fabricated using the graphically epitaxial lift-off method, which effectively mitigates light leakage issues associated with the substrate and facilitates flexible device integration. Compared to the microdisk without a SiO 2 shell coating, the threshold of ultraviolet lasing in the core-shell microdisk is reduced by 1.6 times, the Q-factor is enhanced by 21.7%, and blue lasing is successfully achieved. The underlying physical mechanisms are thoroughly analyzed through steady-state and time-resolved photoluminescence, along with finite-difference time-domain simulations. Furthermore, cooling from 300 K to 100 K significantly enhances lasing performance, increasing the Q-factor by factors of 1.7 and 1.9 in the ultraviolet and blue bands, respectively. Additionally, due to thermal expansion and thermo-optical effects, the blue lasing mode exhibits a temperature-dependent wavelength shift with a slope of -0.007 nm/K. The generation and optimization of dual-band lasing within a single microcavity offer new opportunities for broadband optical communication, high-sensitivity multi-wavelength biosensing, multi-label biomedical imaging, and high-density optical storage.

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Publication Details

Journal
Chip
Published
2025-05-06
DOI
https://doi.org/10.1016/j.chip.2025.100150
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing

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1 citations
Chip
GaN-based semiconductor devices and materials
1.26
article

Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing

Jianqi Dong, Chenguang He, Ningyang Liu, Xingfu Wang, Zhitao Chen, Chunxiang Xu, Kang Zhang, Qiao Wang, Zhuoming Liang
article en
1 citations

Abstract

The development of high-quality, stable, and cost-effective micro/nano dual-band lasing remains a crucial challenge for multifunctional applications. In this study, we demonstrate high-Q dual-band WGM lasing in an independent core-shell microdisk, emitting both ultraviolet and blue lasing. The GaN-based microdisk with InGaN/GaN quantum wells serves as the core, while a SiO 2 layer is deposited on the sidewalls to construct the core-shell microdisk. This independent structure is fabricated using the graphically epitaxial lift-off method, which effectively mitigates light leakage issues associated with the substrate and facilitates flexible device integration. Compared to the microdisk without a SiO 2 shell coating, the threshold of ultraviolet lasing in the core-shell microdisk is reduced by 1.6 times, the Q-factor is enhanced by 21.7%, and blue lasing is successfully achieved. The underlying physical mechanisms are thoroughly analyzed through steady-state and time-resolved photoluminescence, along with finite-difference time-domain simulations. Furthermore, cooling from 300 K to 100 K significantly enhances lasing performance, increasing the Q-factor by factors of 1.7 and 1.9 in the ultraviolet and blue bands, respectively. Additionally, due to thermal expansion and thermo-optical effects, the blue lasing mode exhibits a temperature-dependent wavelength shift with a slope of -0.007 nm/K. The generation and optimization of dual-band lasing within a single microcavity offer new opportunities for broadband optical communication, high-sensitivity multi-wavelength biosensing, multi-label biomedical imaging, and high-density optical storage.

ChipVol. 5(1)
Nanyang Technological University (SG), South China Normal University (CN), Southeast University (BD), Guangdong Academy of Sciences (CN), Southeast University (CN)
Affordable and clean energy
Openalex Percentile: Top 22%
GaN-based semiconductor devices and materials
1.26
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